JPH0113232B2 - - Google Patents

Info

Publication number
JPH0113232B2
JPH0113232B2 JP58161452A JP16145283A JPH0113232B2 JP H0113232 B2 JPH0113232 B2 JP H0113232B2 JP 58161452 A JP58161452 A JP 58161452A JP 16145283 A JP16145283 A JP 16145283A JP H0113232 B2 JPH0113232 B2 JP H0113232B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
electrode
conductivity type
semiconductor
adjacent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58161452A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6053078A (ja
Inventor
Hideo Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58161452A priority Critical patent/JPS6053078A/ja
Priority to US06/610,780 priority patent/US4604638A/en
Publication of JPS6053078A publication Critical patent/JPS6053078A/ja
Publication of JPH0113232B2 publication Critical patent/JPH0113232B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 

Landscapes

  • Thyristors (AREA)
JP58161452A 1983-05-17 1983-09-02 半導体装置 Granted JPS6053078A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58161452A JPS6053078A (ja) 1983-09-02 1983-09-02 半導体装置
US06/610,780 US4604638A (en) 1983-05-17 1984-05-16 Five layer semiconductor device with separate insulated turn-on and turn-off gates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58161452A JPS6053078A (ja) 1983-09-02 1983-09-02 半導体装置

Publications (2)

Publication Number Publication Date
JPS6053078A JPS6053078A (ja) 1985-03-26
JPH0113232B2 true JPH0113232B2 (en]) 1989-03-03

Family

ID=15735368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58161452A Granted JPS6053078A (ja) 1983-05-17 1983-09-02 半導体装置

Country Status (1)

Country Link
JP (1) JPS6053078A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125173A (ja) * 1984-11-22 1986-06-12 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
US5494882A (en) * 1993-04-27 1996-02-27 Nippon Paper Industries Co., Ltd. Thermal recording material
JP3453741B2 (ja) * 1993-07-08 2003-10-06 日本製紙株式会社 感熱記録体

Also Published As

Publication number Publication date
JPS6053078A (ja) 1985-03-26

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